? semiconductor components industries, llc, 2013 january, 2013 ? rev. 6 1 publication order number: NTR2101P/d NTR2101P small signal mosfet ? 8.0 v, ? 3.7 a, single p ? channel, sot ? 23 features ? leading trench technology for low r ds(on) ? ? 1.8 v rated for low voltage gate drive ? sot ? 23 surface mount for small footprint (3 x 3 mm) ? this is a pb ? free device applications ? high side load switch ? dc ? dc conversion ? cell phone, notebook, pdas, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 8.0 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) t 5 s t a = 25 c i d ? 3.7 a t a = 70 c ? 3.0 power dissipation (note 1) t 5 s p d 0.96 w pulsed drain current t p = 10 s i dm ? 11 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 1.2 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state r ja 160 c/w junction ? to ? ambient ? t 5 s r ja 130 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). v (br)dss r ds(on) typ i d max ? 8.0 v 39 m @ ? 4.5 v 52 m @ ? 2.5 v 79 m @ ? 1.8 v ? 3.7 a ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. d g s p ? channel sot ? 23 case 318 style 21 marking diagram & pin assignment tr7 = specific device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 1 2 3 tr7 m 1 gate 2 source drain 3 device package shipping ? ordering information NTR2101Pt1g 3000/tape & reel sot ? 23 (pb ? free) product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
ty characteristics electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 8.0 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 10 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 6.4 v t j = 25 c ? 1.0 a t j = 125 c ? 100 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.40 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j 2.7 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 3.5 a 39 52 m v gs = ? 2.5 v, i d = ? 3.0 a 52 72 v gs = ? 1.8 v, i d = ? 2.0 a 79 120 forward transconductance g fs v gs = ? 5.0 v, i d = ? 3.5 a 9.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 4.0 v 1173 pf output capacitance c oss 289 reverse transfer capacitance c rss 218 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 4.0 v, i d = ? 3.5 a 12 15 nc gate ? to ? source charge q gs 3.8 gate ? to ? drain charge q gd 2.5 switching characteristics (note 3) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 4.0 v, i d = ? 1.2 a, r g = 6.0 7.4 15 ns rise time t r 15.75 25 turn ? off delay time t d(off) 38 58 fall time t f 31 51 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 1.2 a t j = 25 c ? 0.73 ? 1.2 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. NTR2101P product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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